Facility

Samsung Pyeongtaek P3 (NAND + DRAM)

Samsung Pyeongtaek P3 gigafab (opened 2022; fifth-generation Pyeongtaek expansion), producing both V-NAND (3D NAND) and DRAM on a shared campus. P3 is Samsung's newest and most advanced domestic fab, integrating 200+ layer V-NAND production lines and HBM3 DRAM. The Pyeongtaek campus (P1-P4) represents Samsung's long-term fab investment strategy, with P4 planning underway. P3 NAND capacity: ~70,000-80,000 wspm. P3 received CHIPS-equivalent Korean government investment support (K-Chips Act). Source: https://news.samsung.com/global/samsung-electronics-and-the-city-of-pyeongtaek-extend-cooperation-agreement