GDDR Graphics Memory

Micron Technology, Inc. (Nasdaq: MU; ~$25B revenue) is the world's #5 NAND flash manufacturer with ~11% global market share. Micron's NAND operations span Boise ID (R&D and manufacturing), Hiroshima Japan (inherited from Elpida Memory acquisition 2013, produces NAND and DRAM), and Singapore (300mm NAND wafers). Micron is the only US-headquartered company with significant NAND manufacturing scale. Micron has been aggressive on 3D NAND layer count — reaching 232-layer QLC in 2022 — and also leads in 3D NAND cost efficiency per bit through innovative array architecture.

SK Hynix Inc. (KRX: 000660; ~₩66T revenue) is the world's #3 NAND flash manufacturer with ~18% global market share — a position significantly strengthened by its $9B acquisition of Intel's NAND business (completed December 2021), which created the Solidigm subsidiary (formerly Intel NAND) and added the Dalian, China fab. SK Hynix's primary domestic NAND production is at the Cheongju M15X fab (North Chungcheong Province, Korea). SK Hynix is also the world's dominant HBM (High Bandwidth Memory) manufacturer, supplying all of NVIDIA's H100/H200/B200 memory.

Samsung Electronics Co., Ltd. (KRX: 005930; ~$200B revenue) is the world's largest NAND flash memory manufacturer with ~33% global market share. Samsung's NAND operations span the Pyeongtaek P3 complex (South Korea) and — critically — the Xi'an, Shaanxi, China facility, which is Samsung's largest single NAND fab by capacity. Samsung received a one-year BIS export control exemption (later extended) to continue upgrading Xi'an equipment under US restrictions. Samsung pioneered 3D NAND V-NAND technology in 2013 (first commercial 3D NAND) and now produces 200+ layer V-NAND. Also produces DRAM (world's largest) and logic chips (Exynos, foundry).