High-Bandwidth Memory (HBM3/HBM3E)

SK Hynix Inc. (KRX: 000660; ~₩66T revenue) is the world's #3 NAND flash manufacturer with ~18% global market share — a position significantly strengthened by its $9B acquisition of Intel's NAND business (completed December 2021), which created the Solidigm subsidiary (formerly Intel NAND) and added the Dalian, China fab. SK Hynix's primary domestic NAND production is at the Cheongju M15X fab (North Chungcheong Province, Korea). SK Hynix is also the world's dominant HBM (High Bandwidth Memory) manufacturer, supplying all of NVIDIA's H100/H200/B200 memory.

Only US DRAM and NAND flash manufacturer; Boise ID; ~22% global DRAM market share; also makes HBM3E for AI accelerators; critical US semiconductor company with CHIPS Act funding

Samsung Electronics Co., Ltd. (KRX: 005930; ~$200B revenue) is the world's largest NAND flash memory manufacturer with ~33% global market share. Samsung's NAND operations span the Pyeongtaek P3 complex (South Korea) and — critically — the Xi'an, Shaanxi, China facility, which is Samsung's largest single NAND fab by capacity. Samsung received a one-year BIS export control exemption (later extended) to continue upgrading Xi'an equipment under US restrictions. Samsung pioneered 3D NAND V-NAND technology in 2013 (first commercial 3D NAND) and now produces 200+ layer V-NAND. Also produces DRAM (world's largest) and logic chips (Exynos, foundry).