Facility
CXMT Hefei Fab — Domestic Chinese DRAM
CXMT (ChangXin Memory Technologies) Hefei fab — China's primary DRAM manufacturing facility, producing approximately 100,000-120,000 wafer starts per month as of 2024-2025 (compared to ~1.2M wspm total global DRAM capacity). CXMT is limited to 17nm DDR4 and LPDDR4 — approximately 2-3 generations behind Samsung/Hynix/Micron's 1a/1b-nm class DRAM. The Hefei fab has received an estimated $15B in Chinese state subsidies through direct grants, tax incentives, and below-market equipment loans. US export controls (October 2022 and October 2023 rounds) specifically targeted semiconductor manufacturing equipment that would allow CXMT to advance beyond its current 17nm capability. CXMT cannot produce HBM of any generation. China's domestic DRAM represents approximately 5-8% of global commodity DRAM capacity by volume, but zero HBM capacity. Source: https://www.trendforce.com/news/2024/06/05/news-cxmt-expands-dram-output-but-remains-generationally-behind/
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Goods downstream
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Incidents on record
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Stories
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