Facility
Micron Hiroshima NAND Fab (Elpida legacy)
Micron's Hiroshima, Japan 300mm fab (inherited from Elpida Memory acquisition for $2.5B in 2013, when Elpida went bankrupt) produces both NAND flash and DRAM for Micron. The Hiroshima facility gives Micron a significant Japan manufacturing presence. Capacity approximately 90,000-100,000 NAND wspm (with DRAM sharing some capacity). The fab received Japanese government METI subsidies under Japan's semiconductor sovereignty initiative (~¥46.5B). Micron announced further Hiroshima investment in 2023 supported by Japanese government aid. Source: https://investors.micron.com/news-releases/news-release-details/micron-announces-government-approved-subsidies-hiroshima-japan
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Inputs produced
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Goods downstream
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Incidents on record
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Stories
What's produced here
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