Producer

Micron Technology

MUHQ US · Boise, Idahowebsite ↗

Micron Technology, Inc. (Nasdaq: MU; ~$25B revenue) is the world's #5 NAND flash manufacturer with ~11% global market share. Micron's NAND operations span Boise ID (R&D and manufacturing), Hiroshima Japan (inherited from Elpida Memory acquisition 2013, produces NAND and DRAM), and Singapore (300mm NAND wafers). Micron is the only US-headquartered company with significant NAND manufacturing scale. Micron has been aggressive on 3D NAND layer count — reaching 232-layer QLC in 2022 — and also leads in 3D NAND cost efficiency per bit through innovative array architecture.

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Inputs supplied

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Goods downstream

7

Facilities

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Stories

Where it shows up

Goods downstream

Essential goods that depend on something Micron Technology makes, pick one to see the full supply chain.

Where they make it

7 facilities

Micron Boise (MU-1) — DRAM R&D and Production

US

Boise, Idaho · fab

Micron's Boise, Idaho headquarters and primary US DRAM manufacturing and R&D facility — the only advanced DRAM fab on US soil operated by a US company. Micron's Boise fab (MU-1) focuses on leading-edge DRAM process development (1a/1b-nm class) and some volume production, but the majority of Micron's high-volume commodity DRAM production occurs in Singapore. Boise is strategically critical as the home of Micron's DRAM process technology IP. CHIPS Act: Micron received $6.1B in grants (April 2024) for domestic expansion at Boise and at a new greenfield fab in Clay, New York. The Clay NY fab (announced 2022) will be the largest DRAM fab ever built in the US, targeting 1b-nm class DRAM and HBM when fully ramped by 2030. Source: https://investors.micron.com/news-releases/news-release-details/biden-harris-administration-announces-6-billion-chips-act

Micron Boise Fab (ID1/10X)

US

Idaho · semiconductor fab

Micron's primary US DRAM/HBM fab; receiving $6.1B CHIPS Act grant. HBM3e production began 2024; planned HBM4 from 2025.

Micron Boise Fab (MFM)

US

Boise, Idaho · semiconductor_fab

Micron's flagship U.S. manufacturing facility; produces DRAM and NAND; expanding with $15B CHIPS Act investment for new fabs through 2030.

Micron Boise Idaho Fab 1 (CHIPS Act Expansion)

US

Idaho · fab

Micron's primary HBM production facility in Boise, Idaho; receiving portion of $6.14B CHIPS Act funding (covers Idaho + New York fabs). New Idaho Fab 1 targets HBM4 pilot production mid-2027, mass production H2 2027. Positioned as global HBM4 transition hub. Separate Manassas, Virginia fab being upgraded for HBM assembly (H2 2027). Only U.S. HBM production expanding with federal funding. Source: https://www.tomshardware.com/pc-components/dram/micron-details-new-u-s-fab-projects-idaho-fab-1-comes-online-in-2h-2027-new-york-fabs-come-later

Micron Hiroshima NAND Fab (Elpida legacy)

JP

Higashihiroshima, Hiroshima Prefecture · fab

Micron's Hiroshima, Japan 300mm fab (inherited from Elpida Memory acquisition for $2.5B in 2013, when Elpida went bankrupt) produces both NAND flash and DRAM for Micron. The Hiroshima facility gives Micron a significant Japan manufacturing presence. Capacity approximately 90,000-100,000 NAND wspm (with DRAM sharing some capacity). The fab received Japanese government METI subsidies under Japan's semiconductor sovereignty initiative (~¥46.5B). Micron announced further Hiroshima investment in 2023 supported by Japanese government aid. Source: https://investors.micron.com/news-releases/news-release-details/micron-announces-government-approved-subsidies-hiroshima-japan

Micron Manassas VA Fab — Specialty and Defense DRAM

US

Manassas, Virginia · fab

Micron's Manassas, Virginia fab — produces specialty and defense-grade DRAM including radiation-hardened and ruggedized memory for US military and space applications. The Manassas fab is one of two fully domestic Micron DRAM production facilities (alongside Boise) and is particularly important for US national security applications that require domestically manufactured components under ITAR (International Traffic in Arms Regulations). The fab produces SDRAM, DDR, and specialty memory variants for defense primes (Lockheed Martin, Raytheon, Boeing) and space programs. Manassas also received CHIPS Act investment support. Source: https://www.micron.com/about/our-commitment/manufacturing/manassas

Micron Singapore SG1/SG2 — High-Volume DRAM

SG

Woodlands, Singapore · fab

Micron's Singapore fabs (SG1 and SG2) — Micron's highest-volume DRAM production sites, producing the bulk of Micron's commodity DDR5 and LPDDR5X output for PC OEMs, smartphones, and servers. Singapore has been a major Micron manufacturing hub since the early 2000s. SG2 is Micron's most advanced Singapore facility for leading-edge DRAM nodes. Singapore's strategic location, political stability, and strong IP protection environment have made it a preferred DRAM manufacturing base. Combined Singapore capacity represents approximately 35-40% of Micron's total DRAM wafer output. Source: https://www.micron.com/about/our-commitment/manufacturing/singapore

What else they do

Business segments

The company's full revenue map, where this supply-chain role fits within their broader business.

  • DRAM (Only US Manufacturer)

    50%
  • NAND Flash

    30%
  • Automotive + Embedded Memory

    12%
  • Storage Solutions

    8%

Intelligence

What's known

Sourced claims about this company's role in supply chains, chokepoints, concentration, incidents, dual-use connections.

  • Did you know2023

    In May 2023, China's Cyberspace Administration of China (CAC) banned operators of Chinese "critical information infrastructure" from purchasing Micron products — the first time a major government explicitly blacklisted a specific US semiconductor company's products. The stated rationale was cybersecurity review failure, but the action followed weeks after the US tightened export controls on advanced semiconductor equipment to China. This established a precedent: the Chinese government can use domestic regulatory authority as a targeted retaliatory weapon against individual US companies rather than imposing broad tariffs. Micron lost approximately $3.3B in annualized China revenue (roughly 10% of total sales). Chinese memory buyers pivoted to Samsung and SK Hynix, and accelerated procurement from domestic Chinese DRAM startups (ChangXin Memory Technologies, CXMT). The Micron China ban is the first case study of semiconductor supply chain weaponization by China against a US-domiciled company.

    Cyberspace Administration of China
  • Origin2023

    Micron Technology was founded in 1978 in a dentist's office in Boise, Idaho — a city with no prior semiconductor industry — by Ward and Joe Parkinson and two investors who designed the company's first 64K DRAM chip in a garage before a factory existed. The Idaho location was entirely accidental: it resulted from the founders' personal network connections rather than any industrial cluster logic. Micron survived the 1985 DRAM price collapse that drove Texas Instruments and Motorola out of DRAM by accepting a $1M investment from Idaho potato mogul J.R. Simplot (the same Simplot family that built McDonalds' french fry supply chain). Simplot money kept Micron alive when Japanese producers were selling DRAM below cost to capture market share. Micron then acquired the bankrupt Elpida Memory (Japan) in 2013 for $2.5B — Elpida had collapsed partly due to the 2011 Fukushima disaster disrupting Japan semiconductor supply chains. The only US DRAM manufacturer exists because of Idaho potato money.

    Micron Technology